(Hong Kong)
Product Summary
The S524C80D41-DCB0 is an EEPROM. It is fabricated using Samsung’s most advanced CMOS technology. One of its major feature is a hardware-based write protection circuit for the entire memory area. Hardware-based write protection is controlled by the state of the write-protect (WP) pin. Using onepage write mode, you can load up to 16 bytes of data into the EEPROM in a single write operation.
Parametrics
S524C80D41-DCB0 absolute maximum ratings: (1)Operating voltage: 2.5 V to 5.5 V (write) and 2.2 V to 5.5 V (read); (2)Operating current Maximum write current: < 3 mA at 5.5 V; (3)Operating current Maximum read current: < 200 uA at 5.5 V; (4)Operating current Maximum stand-by current: < 5 uA at 3.3 V:–55 to +125 °C; (5)Operating temperature range: -25°C to +70°C (commercial) and -40°C to +85°C (industrial); (6)Operating clock frequencies: 100 kHz at standard mode and 400 kHz at fast mode.
Features
S524C80D41-DCB0 features: (1)Two-wire serial interface; (2)Automatic word address increment; (3)1K/2K/4K/8K-bit (128/256/512/1,024-byte) storage area; (4)16-byte page buffer; (5)Typical 3.5 ms write cycle time with auto-erase function; (6)Hardware-based write protection for the entire EEPROM (using the WP pin); (7)EEPROM programming voltage generated on chip; (8)1,000,000 erase/write cycles; (9)100 years data retention.
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